Carbon Nanotube Field Effect Transistor based Digital Logic Circuits

Carbon nanotubes (CNTs), with exceptional electronic and optical properties, have become great interest for future electronic applications. Some of these properties such as symmetric band structure, direct bandgap, and near ballistic transport make them attractive for circuit implementations. The objective of this paper is modeling, performance evaluation and prediction of carbon nanotube field effect transistors (CNTFETs) for nanoscale devices and circuits. Comparison of circuit performance of carbon nanotube field effect transistor and conventional Si CMOS has been made for various benchmark circuits such as NOT,NAND and NOR gates.